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Job Description 【Background】 This team support SPS FET design for PCP. In the last year, two out of the four device engineers who no longer with the company. We are aslo supporting the new MV FET REXFET2 and
Job Description We are seeking a highly motivated GaN Technology Development Engineer to lead development of next-generation GaN power devices. This role focuses on unit process development, process integration, and wafer-level electrical characterization, driving technology from early concept
Job Description We are looking for a new engineer for mask layout design. The successful candidate will play a key role in the mask layout design and development of next-generation LV and MV shielded-gate trench MOSFET technologies.