Background
In our power semiconductor business, we arefocusing on IGBTs and Power MOSFETs for the rapidly growing xEV market and areincreasing our production capacity to meet the strong demand. In addition tothese, we are planning to develop higher performance SiC MOSFETs and launchthem in the market as soon as possible. We are looking for engineers who canlead the development of next-generation SiC devices superior to competitors,with our device and process engineers who are leading the field.
- Wafer process development project management from concept study to mass production technology establishment
- Collaboration and negotiation with related companies
- Direction on device structure design and process flow construction.
- Coordination and negotiation with various departments such as element process technology (frontside/backside process), business, quality assurance, etc.
Location
Takasaki-City Gunma-Pre
Required
- 2 years experience in project management of power device development
- 3 years experience in SiC device structure design and process development
- 3 years experience in 150mm or 200mm wafer process development
Nice tohave
- Experience with using TCAD
- Expertise on IGBT, SiC module packaging.
- Expertise on inverter system.
LanguageSkills
- English：business level (TOEIC score around 700)
- Japanese：business level（JLPT score: N1)
申請を続行してください
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